摘要
This paper presents the design and implementation of a fully integrated low noise multi-band LC-tank voltage-controlled-oscillator （VCO）. Multi-band operation is achieved by using switched-capacitor resonator. Additional three-bit binary weighted capacitor array is also used to extend frequency tuning range in each band. To lower phase noise, two noise filters are added and a linear varactor is adopted. Implemented in a 0.18 ~tm complementary-metal- oxide-semiconductor （CMOS） process, the VCO achieves a frequency tuning range covering 2.26-2.48 GHz, 2.48- 2.78 GHz, 2.94-3.38 GHz, and 3.45-4.23 GHz while occupies a chip area of 0.52 mm2. With a 1.8 V power supply, it draws a current of 10.9 mA, 10.6 mA, 8.8 mA, and 6.2 mA from the lowest band to the highest band respectively. The measured phase noise is - 109-- 120 dBc/Hz and - 121-- 131 dBc/Hz at a 1 MHz and 2.5 MHz offset from the carrier, respectively.
This paper presents the design and implementation of a fully integrated low noise multi-band LC-tank voltage-controlled-oscillator （VCO）. Multi-band operation is achieved by using switched-capacitor resonator. Additional three-bit binary weighted capacitor array is also used to extend frequency tuning range in each band. To lower phase noise, two noise filters are added and a linear varactor is adopted. Implemented in a 0.18 ~tm complementary-metal- oxide-semiconductor （CMOS） process, the VCO achieves a frequency tuning range covering 2.26-2.48 GHz, 2.48- 2.78 GHz, 2.94-3.38 GHz, and 3.45-4.23 GHz while occupies a chip area of 0.52 mm2. With a 1.8 V power supply, it draws a current of 10.9 mA, 10.6 mA, 8.8 mA, and 6.2 mA from the lowest band to the highest band respectively. The measured phase noise is - 109-- 120 dBc/Hz and - 121-- 131 dBc/Hz at a 1 MHz and 2.5 MHz offset from the carrier, respectively.
基金
supported by the Project of the State Key Development Program for Basic Research of China(2010CB327404)
