摘要
研究了非掺杂半绝缘LECGaAs霍耳参数温度关系。研究结果表明 ,杂质和缺陷的不均匀分布引起的电势波动对霍耳测量结果有明显影响 ,存在电势波动的情况下 ,仅用霍耳测量不能测定真实的自由载流子浓度和费米能级位置。
The temperature dependence of the Hall data was studied for undoped semi-insulating LEC GaAs. It was found that the potential fluctuations due to the nonuniformity of impurities and defects have a considerable effect on the Hall measurement. In the presence of the potential fluctuation, the exact carrier concentration and the Fermi level position can't be determined by solely Hall measuement.
