摘要
综述了近年来MOSFET的热载流子效应和可靠性问题 ,总结了几种热载流子 ,并在此基础上详细讨论了热载流子注入 (HCI)引起的退化机制。对器件寿命预测模型进行了总结和讨论。
The issues of hot carrier effects in MOSFET's are reviewed. Hot carriers are summarized. On this basis, the mechanisms of Hot Carrier Induced (HCI) degradation under on state stress modes are discussed. Lifetime prediction models are summarized and discussed.
