富勒烯作为电子束抗蚀剂在纳米光刻中的应用

Application of Fullerenes in Nanolithography As Electron Beam Resists

纳米光刻对于纳米电子学的研究与发展具有非常重要的意义。分子尺寸为 0 7纳米且可发生电子束诱导聚合的富勒烯 (主要是C6 0 ) ,可以作为电子束抗蚀剂 ,用于电子束纳米光刻 ,制作纳米级精细图形。这类抗蚀剂主要有三种类型 :纯C6 0 、C6 0 衍生物及C6 0 与常用抗蚀剂形成的纳米复合抗蚀剂。介绍了这方面工作的研究现状、存在的问题及发展前景。

Fullerene C 60 (molecular size 0.7nm) can be used as electron beam resist to fabricate nanometer patterns due to the fact that C 60 molecules could produce electron beam induced polymerization. The fullerene based resists may be formed by pure C 60 , C 60 derivatives and C 60 incorporated nanocomposite resist system. The research progress and the future prospect were reviewed and discussed.