二氧化锡薄膜的电阻气敏和光透射率气敏性能

Resistance Gas Sensitivity and nansmittance Gas Sensitivity of SnO_(2)Thin Film by a Novel Sol-Gel Method

以无机盐为原料，采用新颖的溶胶－凝胶工艺制备了具有优良电阻－气敏性能的纳米晶二氧化锡薄膜，其在最佳工作温度 ２００℃对 ６００ｐｐｍ ＣＯ的灵敏度可达 ５００，响应时间和恢复时间分别为１３ｓ和 ２０ｓ．进一步研究了薄膜的光透射率－气敏性能，发现当通 ＣＯ时，透射率下降，最佳工作温度与电阻－气敏性能一致，当提高薄膜的退火温度时，电阻－气敏和光透射率－气敏的灵敏度均下降．分析了产生这些现象的原因．

SnO2 thin film with good resistance-gas sensitivity was prepared by a novel sol-gel method using inorganic salts as starting materials. The sensitivity of the thin film to 600ppm CO was up to 500 at the optimal working temperature of 200℃, white the respondence time and recovery time were 13s and 20s respectively. The transmittance gas sensitivity was investigated and it was found that the transmittance of the thin film decreased in CO atmosphere. The best working temperature of the transmittance gas sensitivity is the same as that of the resistance gas sensitivity. Both resistance gas sensitivity and transimittance gas sensitivity decrease when the annealing temperature of the thin film increases. The reason of abouve phenomenon was discussed.