摘要
用Ar+束溅射沉积技术在HgCdTe表面实现了ZnS的低温沉积.用X射线光电子能借(XPS)对上述ZnS薄膜以及热蒸发ZnS薄膜中的Zn、S元素的化学环境进行了对比实验研究.实验表明:离子束溅射沉积ZnS薄膜具有很好的组份均匀性,未探测到元素Zn、S的沉积.
The ZnS film was grown on HgCdTe surface by using the low-temperature ion beam sputtering technique. Zn and S elements in the sputtering ZnS film sample were studied and compared with those in the evaporating ZnS film by using X-ray photoelectron spectroscopy (XPS) technique. It is proved that the constituent elements are homogeneous, and the deposition of element Zn, S cannot be detected in the sputtering ZnS film.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第6期1127-1130,共4页
Journal of Inorganic Materials
基金
国家高技术航天领域青年基金资助!(863-2.00.4)
江苏省教委自然科学基金资助!(98KJB430001)
关键词
硫化锌薄膜
离子束溅射沉积
XPS
HGCDTE
ZnS
ion beam sputtering deposition technique
XPS
HgCdTe
surface anti-reflection coat