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(Ba_(0.7)Sr_(0.3))TiO_3铁电薄膜热敏电容器的研制 被引量:3

Fabrication of Thermal-Sensitive(Ba_(0.7)Sr_(0.3) )TiO_3 Ferroelectric Film Capacitors
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摘要 采用射频磁控溅射法制备了用于非致冷红外焦平面阵列的BST((Ba0 .7Sr0 .3)TiO3)铁电薄膜热敏电容器 .介绍了热敏电容器上下电极的选材和制备及铁电薄膜的制备工艺 .根据热敏电容器的电容 -温度曲线 ,分析了热敏电容器的工作原理 .实验结果表明BST铁电薄膜热敏电容器可以工作在室温附近 ,约 2 The thermal sensitive BST ferroelectric thin film capacitors for uncooled infrared focal plane array prepared by Radio frequency Magnetron sputtering have been investigated by focusing on the condition of fabrication of electrode and BST thin film. The capacitor temperature properties of the thermal sensitive BST ferroelectric thin film capacitors have been measured by an impedance analyzer. According to the capacitor temperature curve and the theory of thermal sensitive capacitors, it is possible that the thermal sensitive BST ferroelectric thin film capacitors can work at the room temperature (about 26?℃).
出处 《华中理工大学学报》 CSCD 北大核心 2000年第10期70-71,共2页 Journal of Huazhong University of Science and Technology
基金 国防科技预研基金资助项目
关键词 BST 铁电薄膜 热敏电容器 电容温度曲线 测量 BST ferroelectric thin film thermal sensitive capacitor uncooled infrared focal plane array capacitor temperature curve
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  • 1Li Tao Gu Hongwei Wang Peiwen Wang Xiaoping Xie Bowei.Preparation of Large Area Double Sided YBCO Thin Films by DC Magneton Sputtering[J].Journal of Rare Earths,2004,22(z1):249-251. 被引量:2
  • 2Hanson C,SPIE Infrared Detectors: State Art 1735,1992年,17页
  • 3Minoru Noda, Kazuhiko Hashimoto, Ryuichi Kubo, et al. A new type of dielectric bolometer mode of detector pixel using ferroelectric thin film capacitors for infrared image sensor [J]. Sensors and Actuators, 1999, 77: 39.
  • 4Boikov Yu A. Claeson T. c-Axis oriented epitaxial Ba0.25Sr0.75TiO3 film display curie-weiss behavior [J]. Physica B, 2002,311: 250.
  • 5Vendik O G, Hollmann E K, Kozyrev A B, et al. Ferroelectric tuning of planar and bulk microwave devices [J]. Jounal of Superconductivity, 1999, 12(2): 325.
  • 6Horwitz J S, et al. Pulsed laser deposition as a materials research tool [J]. Applied Surface Science, 1998, 127 - 129:507.
  • 7Minoru Noda, et al. A uncooled infrared sensor of dielectric bolometer mode using a new detection technique of operation bias voltage [J]. Sensors and Actuators A, 2002, 97-98: 329.
  • 8Kazuhiko Hashimotoa, Huaping Xua, Tomonori Mukaigawaa, et al. Si monolithic microbolometers of ferroelectric BST thin film combined with readout FET for uncooled infrared image sensor[J]. Sensors and Actuators A, 2001, 88: 10.
  • 9Ruffnera J A, Clema P G, Tuttlea B A, et al. Uncooled thin film infrared imaging device with aerogel thermal isolation: deposition and planarization techniques [J]. Thin Solid Films, 1998,332: 356.
  • 10Liu Shijian, Zeng Xiangbin, Chu Junhao. Thermal-sensitive BST thin film capacitors for dielectric bolometer prepared by RF magnetron sputtering [ J ]. Microelectronics Journal, 2004, 35(7): 601.

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