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Effects of interaction between defects on the uniformity of doping HfO_2-based RRAM:a first principle study 被引量：6

Effects of interaction between defects on the uniformity of doping HfO_2-based RRAM:a first principle study
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摘要 The physical mechanism of doping effects on switching uniformity and operation voltage in Al-doped HfO_2 resistive random access memory(RRAM) devices is proposed from another perspective:defects interactions, based on first principle calculations.In doped HfO_2,dopant is proved to have a localized effect on the formation of defects and the interactions between them.In addition,both effects cause oxygen vacancies(V_O) to have a tendency to form clusters and these clusters are easy to form around the dopant.It is proved that this process can improve the performance of material through projected density of states(PDOS) analysis.For V_O filament-type RRAM devices, these clusters are concluded to be helpful for the controllability of the switching process in which oxygen vacancy filaments form and break.Therefore,improved uniformity and operation voltage of Al-doped HfjO_2 RRAM devices is achieved. The physical mechanism of doping effects on switching uniformity and operation voltage in Al-doped HfO_2 resistive random access memory(RRAM) devices is proposed from another perspective:defects interactions, based on first principle calculations.In doped HfO_2,dopant is proved to have a localized effect on the formation of defects and the interactions between them.In addition,both effects cause oxygen vacancies(V_O) to have a tendency to form clusters and these clusters are easy to form around the dopant.It is proved that this process can improve the performance of material through projected density of states(PDOS) analysis.For V_O filament-type RRAM devices, these clusters are concluded to be helpful for the controllability of the switching process in which oxygen vacancy filaments form and break.Therefore,improved uniformity and operation voltage of Al-doped HfjO_2 RRAM devices is achieved.
作者 赵强 周茂秀 张伟 刘琦 李晓风 刘明 代月花
机构地区 School of Electronic and Information Engineering Laboratory of Nano-Fabrication and Novel Device Integrated Technology Internet Network Information Center
出处 《Journal of Semiconductors》 EI CAS CSCD 2013年第3期1-6,共6页 半导体学报（英文版）
基金 supported by the National Natural Science Youth Foundation of China(No.61006064)
关键词 RRAM hafnium oxide localized effect oxygen vacancy DFT RRAM hafnium oxide localized effect oxygen vacancy DFT
分类号 TN304 [电子电信—物理电子学] O469 [理学—凝聚态物理]
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参考文献25

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同被引文献63

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Journal of Semiconductors
2013年 第3期

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