Strong localization across the metal-insulator transition at the Ag/Si(111)-(√3 × √3 )R30° interface
参考文献32
-
1T. Uchihashi, P. Mishra, M. Aono, and T. Nakayama, Phys. Rev. Lett., 2011, 107(20): 207001.
-
2S. Yamazaki, Y. Hosomura, I. Matsuda, R. Hobara, T. Eguchi, Y. Hasegawa, and S. Hasegawa, Phys. Rev. Lett., 2011, 106(11): 116802.
-
3T. Hirahara, I. Matsuda, S. Yamazaki, N. Miyata, S. Hasegawa, and T. Nagao, Appl. Phys. Lett., 2007, 91(20): 202106.
-
4F. Song, L. Gammelgaard, Ph. Hofmann, and J. W. Wells, Appl, Phys. Lett., 2011, 98(5): 052106.
-
5T. Tanikawa, I. Matsuda, T. Kanagawa, and S. Hasegawa, Phys. Rev. Lett., 2004, 93(1): 016801.
-
6H. Aizawa, M. Tsukada, N. Sato, and S. Hasegawa, Surf. Sci., 1999,429(1-3): L509.
-
7N. Sato, S. Takeda, T. Nagao, and S. Hasegawa, Phys. Rev. B, 1999, 59(3): 2035.
-
8Y. Nakamura, Y. Kondo, J. Nakamura, and S. Watanabe, Phys. Rev. Lett., 2001, 87(15): 156102.
-
9Y. G. Ding, C. T. Chan, and K. M. Ho, Phys. Rev. Lett., 1991, 67(11): 1454.
-
10S. Watanabe, M. Aono, and M. Tsukada, Phys. Rev. B, 1991, 44(15): 8330.
-
1乐松,杜娟,章园,张裕恒.Metal-Insulator Transition in CuIr2(S1-xTex)4[J].Chinese Physics Letters,2009,26(11):171-173.
-
2韩汝珊,苏肇冰,王玉鹏.Metal-Insulator Transition and Superconductivity in Y_(1-x)Pr(Ce)_xBa_2Cu_3O_7[J].Science China Mathematics,1994,37(12):1464-1471.
-
3邓丙成,徐耕,陈文华,何永健,谢茂海,唐叔贤.Si(111)-(3^(1/2)×3^(1/2))R30°-Ga表面原子结构[J].Journal of Semiconductors,2001,22(4):427-430.
-
4夏正才,袁松柳,张力江,张国宏,冯文,唐洁,刘莉,刘胜,唐超群.Effect of High Resistance Phases on Metal—Insulator Transition of La0.67Ca0.33MnO3[J].Chinese Physics Letters,2003,20(7):1116-1119.
-
5王志明,邢定钰,张世远,徐庆宇,Margriet VanBael,都有为.Magnetic-Field-Induced Semimetal-Insulator-like Transition in Highly Oriented Pyrolitic Graphite[J].Chinese Physics Letters,2007,24(1):199-202. 被引量:1
-
6谢希德,资剑.金属在半导体表面上的吸附[J].物理,1992,21(11):641-646. 被引量:1
-
7路月峰,葛渭高.Existence of Positive Solutions for Higher-Order Four-Point Boundary Value Problems with a p-Laplacian Operator[J].Journal of Beijing Institute of Technology,2009,18(1):98-100.
-
8李绍宽.ON THE ASYMPTOTIC PUTNAM-FUGLEDE THEOREM[J].Chinese Science Bulletin,1984,29(3).
-
9邵碧琳,江风益,戴江南,王立,方文卿,蒲勇.常压化学气相沉积法在Ag/Si(111)模板上生长ZnO薄膜及其性能研究[J].光学学报,2006,26(7):1115-1118. 被引量:6
-
10朱建青,靳丽丽.A Probe Method of Gradient Projection Type[J].Chinese Quarterly Journal of Mathematics,1999,14(1):102-110.