摘要
针对单光子雪崩光电二极管(SPADs)的单光子量子效率(SPQE),提出了一种严格的数学模型。模型适用于工作波长为1.3μm和1.5μm的In_(0.52)Al_(0.48)As、InP倍增层和In_(0.52)Al_(0.48)As-InP异质结倍增层的SPADs。模型作为器件结构、工作电压、倍增层材料的函数,可用来优化SPQE,进而评估和优化盖革模式下APDs的性能。
According to single-photon quantum efficiency （SPQE） of single-photon avalanche photodiodes （SPADs）, a strict mathematical model was proposed. The model is suitable for SPADs with In0.52A10.48As or InP multiplication layer as well as In0.52Alo.4sAs-InP heterojunction multiplication layer for operating wavelengths of 1.3 μm and 1.5 μm. As the function of the device structure, operating voltage, and multi- plication layers materials, the model can be used to optimize SPQE, furthermore evaluate and optimize the performance of APDs in Geiger mode.
出处
《量子电子学报》
CAS
CSCD
北大核心
2013年第2期219-224,共6页
Chinese Journal of Quantum Electronics
基金
湖北省自然科学基金(2010CDB10803)
湖北理工学院科研项目基金(09yjz42B)资助
关键词
光电子学
单光子量子效率
雪崩概率
暗计数
雪崩光电二极管
optoelectronics
single-photon quantum efficiency
avalanche probability
dark count
avalanche photodiodes
