单壁碳纳米管的结构控制生长方法

Structure Controlled Growth of Single-Walled Carbon Nanotubes

单壁碳纳米管在原子尺度的结构变化即可导致其电学、光学方面等性质的多样性和非连续的变化——如电学性质上可呈现半导体性或金属性。然而,在单壁碳纳米管表现出诸多优异性能的同时,如何实现碳纳米管的结构控制制备仍面临严峻的挑战。本文以单壁碳纳米管的管径、导电属性和手性控制为目标,介绍单壁碳纳米管的结构控制生长方法,主要包括温度扰动法、金属催化剂结构设计法、生长气氛调控法、外场辅助法、基底诱导法、非金属粒子催化法和sp2碳结构模板法等。并在此基础上总结了单壁碳纳米管结构控制生长的基本思路及实现途径,以期为后续单壁碳纳米管的规模化应用奠定基础。

Single-walled carbon nanotubes （SWNTs） have been regarded as one of the promising candidates for further applications in nanoeleetronic devices, including field-effect transistor, transparent film and chemical sensor. However, as device performance urges many challenging requirements on the material synthesis, researchers have been aggressively seeking the potential strategies for preparing samples of SWNTs with well-defined structures （ geometry, location, diameter, length, wall number, metallic/semiconducting and chirality ） on surfaces. Herein, this review highlights in situ approaches towards selective growth of mono-disperse SWNT samples including temperature mediated method, catalyst structure engineering, gas ambient tuning, external field assisted chemical vapor deposition （CVD） method, surface atomic arrangement induction method, nonmetal catalyzing and sp2 carbon nano-strueture templated growth to get SWNTs samples with controlled diameters, chiralities and electronic properties （ metallic or semicondueting） and special morphology. The majority of the growth methods covered here are CVD growth carried on the substrates, for its capacity of growing high-purity,well arranged and aligned samples. Based on the understanding of the growth mechanism of those strategies, we try to propose the general guideline on that how can we develop the optimal solution for controlled growth of SWNTs. It is expected that SWNTs samples with controlled structures will see ubiquitous applications in future nano-electronic devices.