摘要
分析了单片数控衰减器的衰减原理,设计了一款DC~2 GHz的大衰减量的6 bit数控衰减器。并通过数模混合设计,采用基于GaAs工艺的场效应管驱动器结构将正TTL电平转换为衰减器负的控制电平,成功实现了正电控制,对单片电路进行了仿真与优化,采用GaAs工艺技术完成了流片。测试结果表明,在DC~2 GHz频带内,衰减步进1 dB,最大衰减量63 dB,插入损耗小于1.7 dB,衰减精度小于±0.1 dB@1 dB~4 dB;小于±0.8 dB@8 dB~32 dB;小于±1.3 dB@48 dB~63 dB,两个端口在所有态下的驻波比小于1.2∶1。单片数控衰减器芯片尺寸为3.0 mm×2.0 mm,控制电压为0和5 V。
A 6 bit digital attenuator with large attenuation of DC - 2 GHz was designed and the attenuation principle of monolithic digital attenuator was analyzed. Through the digital-analog hybrid design method, TTL level was converted to negative control level by a GaAs FET driver, positive-bias control was realized. The attenuator circuit fabrication based on the GaAs technology. Test results show that the attenuator works from DC to 2 GHz. It has a 63 dB attenuation range in 1 dB increments, and reference state insertion loss less than 1.7 dB. The attenuation accuracy is less than ±0. 1 dB from 1 dB to4 dB, less than +0.8 dB from 8 dB to 32 dB, less than ±1.3 dB from 48 dB to 63 dB and the voltage standing wave ration (VSWR) of the two ports is less than 1.2:1 in all states. The size of the final circuit is 3.0 mm - 2.0 mm. The control voltages are 0 V and 5 V.
出处
《半导体技术》
CAS
CSCD
北大核心
2013年第3期184-188,共5页
Semiconductor Technology
关键词
大衰减量
数控衰减器
正电控制
微波单片集成电路
数模混合
large attenuation
digital attenuator
positive control
microwave monolithicintegrated circuit (MMIC)
digital analog hybrid