摘要
介绍了一种基于GaN-HEMT的L波段线性功率放大器,GaN功率HEMT具备高电压、高功率密度和高温工作等特点,对提升功率放大器线性输出功率、工作效率和增益等性能起到重要作用。在GaN功率HEMT基础上,通过对功率放大器的线性化技术研究,使用ADS2009仿真软件建立电路模型,采用了预失真技术来改善功率放大器的线性度和工作效率,并且优化50Ω匹配电路来改善输入输出端驻波比和降低功率损耗。最终研制出在+28 V供电电压情况下,增益为16 dB、1 dB压缩点处输出功率为45 dBm和工作效率为35%的线性功率放大器。
An L-band high linearity power amplifier was introduced based on GaN high electron mobility transistor （HEMT）. The GaN-HEMT has advantages of high operating voltage, high power density and excellent high temperature performance. These advantages were useful to improve the main parameters of the power amplifier such as the linearity output power, operating efficiency and power gain. By research of amplifier linearity techniques based on GaN-HEMT, the circuit model was established by ADS2009 software. The pre-distortion techniques were choosed to improve the linearity and efficiency of the power amplifier. The 50 matching circuit was optimized to improve the input/output standing wave ratio and decrease the power loss. Finally, with supply voltage of ＋ 28 V, an L-band high linearity power amplifier with 16 dB power gain, 45 dBm linear output power and 35% efficiency was developed.
出处
《半导体技术》
CAS
CSCD
北大核心
2013年第3期207-211,共5页
Semiconductor Technology
