二维辉钼材料及器件研究进展

Recent progress in preparation of material and device of two-dimensional MoS_2

经过几十年的发展,集成电路的特征尺寸将在10—15年内达到其物理极限,替代材料的研究迫在眉睫.石墨烯曾被寄予厚望,但由于其缺乏带隙限制了在数字电路领域的应用.近年来,单层及多层辉钼材料由于具有优异的半导体性能,有可能超过石墨烯成为硅的替代者而引起了微纳电子领域的广泛关注.本文对近二年国际上辉钼半导体器件研制、辉钼半导体材料的性能表征及制备方法研究等方面的进展进行了综述,并对大面积单层材料的研制提出了值得关注的方向.

After several decade developments the critical dimension of an integrated circuit will reach its limit value in the next 10-15 years, and the substitute materials been to be researched, Graphene has beed considered the most likely candidate, however, pristine graphene does not have a bandgap, a property that is essential for many application, including transistors. The two-dimensional layer of molyb- denum disulfide （MoS2） has recently attracted much attention due to its excellent semiconductor property and potential applications in nanoelectronics. The device preparation, two＇dimensional material research and property analysis of MoS2 are summarized and the trend for future research on large sigle-layer MoS2 crystal is presented.