磁存储器环形带切口结构自由层磁化反转的微磁模拟

Micromagnetic simulation of magnetization reversal on the annular free layer with nick in magnetic random access memory

针对基于磁性隧道结的赝自旋阀磁随机存储器,使用带斜面切口环形结构自由层,抛弃采用厚度改变矫顽力的方式,降低了磁性隧道结的面积电阻,改进了垂直电流磁随机存储器.通过集成工艺中淀积的二次效应生成磁环的切口,利用微磁学方法计算分析了自由层的磁化反转特性,结果表明该模型具有低串扰、低面积电阻、高磁阻率以及较强的抗干扰性能.

Based on magnetic tunnel junctions （MTJs）, the magnetic random access memory with the pseudo-spin value film model, the annular structure with slanted cuts is used as free layer and the way to vary coercivity by changing thickness is discarded. With this improvement, the area resistance of the MTJs is reduced. The analysis of the cuts on the annular layer generated from the secondary effects of deposition in the IC process, is made by the micromagnetic simulations. The magnetization reversal characteristics from the analysis reveal the properties of low crosstalk, low RA, high magnetic reluctance, and strong anti-interference.