摘要
研究了工艺参数对硼轻掺杂氢化非晶硅薄膜形成及光电导性能的影响。采用射频磁控溅射的方法制备了硼轻掺杂的氢化非晶硅薄膜,结果表明,衬底温度和溅射功率对薄膜的沉积速率、掺杂量、光吸收系数、电导率等有着很大的影响,在温度300℃,溅射功率300 W时沉积速率达到最大。通过实验得到的规律可以通过调整工艺参数来得到性能优良的硼轻掺杂氢化非晶硅薄膜。
The influence of process parameters on the performance of boron-doped a-Si ： H thin film growth and pho- toconductivity were studied. Boron-doped a-Si： H thin films have been prepared by RF magnetron sputtering method. The results show that the substrate temperature and sputtering power have a great influence on deposition rate, doping amount, optical absorption coefficient and conductivity. The highest deposition rate value was at the substrate temperature of 300 ~C and the sputtering power of 300 W. Through the experiment results we can acquire the boron-doped a-Si：H thin film with good quality by adjusting the process parameters.
出处
《电子器件》
CAS
北大核心
2012年第6期623-626,共4页
Chinese Journal of Electron Devices
关键词
氢化非晶硅
硼轻掺杂
射频磁控溅射
a-Si ： H film： light-doped Boron
RF magnetron sputtering method
