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电化学腐蚀多晶硅衬底减反射效果研究 被引量:3

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摘要 将多晶硅片置于HF、N,N-二甲基甲酰胺(DMF)、去离子水的混合溶液中,研究电流密度、腐蚀时间对多晶硅绒面形貌以及表面反射率的影响。实验结果表明,可在多晶硅上获得平均孔径为5~20μm、深为1~3μm的腐蚀坑,其加权反射率达到11.3%,较处理之前降低了60%。
出处 《太阳能》 2013年第2期54-57,共4页 Solar Energy
基金 国家863高科技研究发展计划资助 项目编号:2011AA050502 国家913重点基础研究计划资助 项目编号:2011CBA00705
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