InSb光电导太赫兹辐射理论研究

Theory of terahertz radiation through InSb photoconduction

为了研究锑化铟(InSb)半导体材料的光电导太赫兹辐射过程,推导了太赫兹近场辐射公式。在考虑俄歇弛豫机制对光电导过程影响的情况下,分析了InSb光生载流子浓度、载流子散射率以及光电导表面反射率随时间的变化。结果表明,数值模拟与文献中的实验曲线变化趋势一致,计算结果吻合,证明了该研究方法的正确性。

In order to study the terahertz radiation process through InSb photoconduction, the terahertz near field radiation formulas was deduced. Considering the effect of auger relaxation on the photoeonduction process, the change of the carrier density, the scattering ratio and the reflection ratio of InSb photoconduction were analyzed in detail. It can be illustrated the validity of this research as the simulation results can fit well with the experimental data in the references.