纳米SiCN薄膜的制备和光致发光

Preparation and Photoluminescence of Nanometer SiCN Films

采用磁控溅射技术制备了SiCN薄膜,利用傅里叶红外光谱仪、扫描探针显微镜、荧光分光光度计对薄膜结构、表面形貌、光致发光进行了表征。结果表明SiCN薄膜有良好的发光性质,通过对薄膜的红外光谱及光致发光谱分析可知,当氩气和氮气流量比为4:1时,最有利于SiCN薄膜的生成,PL发光峰强度也达到最大值,SiCN薄膜的光发射主要来源于带-带直接辐射复合及导带底到缺陷态辐射跃迁。

The SiCN films were prepared by magnetron sputtering technique. Microstructures, surface morphology and photoluminescence of the films were characterized with Fourier Transform Infrared Spectrometer,SPM and fluorescence spectrophotometer. The result indicates that the SiCN films have good luminescence. Through the analysis of infrared spectrum and PL spectrum,It is most conducive for SiCN films to generate when the flow-ratio of argon and nitrogen is 4 ： 1,and the PL reaches the maximum intensity. The light emission of SiCN films mostly comes from band-band direct radiative recombination and the transition of conduction band bottom to the defect state radiation.