氧含量对a-SiO_xN_y薄膜荧光特性的影响

Influence of Oxygen Content on Photoluminescence from a-SiO_xN_y thin Films

采用PECVD方法制备了a SiOxNy 薄膜 ,观察到强荧光发射现象 ,荧光光谱由波段范围为 2 60～3 5 0nm和 5 0 0～ 70 0nm的宽谱带和位置分别为 3 65、 3 75、 3 80、 73 5和 74 5nm的荧光发射峰组成。通过改变沉积过程中氢分压研究了氧含量及荧光特性的影响 ,随着氢分压下降 ,薄膜中氧含量升高 ,荧光峰强度增加 ,但位置不变 ;而荧光带在强度增加的同时 ,中心位置产生红移。根据实验结果对荧光起源及变化机制进行了讨论。

Amorphous SiO xN y thin films were deposited by PECVD technique.Strong photoluminescence bands centered at about 340 and 600 nm and peaks centered at 365,375,380,735 and 745 nm from asprepared samples were observed at room temperature.Influence of partial pressure of H 2 during deposition was investigated.The results show that strength of PL and oxygen content increase with H 2 partial pressure decrease,the position of PL peaks does not change,and the central position of PL bands shifts.The possible origin of PL and mechanism of the variations are discussed according to experimental results.