溅射时间对Mo薄膜结晶取向的影响

The influence of the preferred orientation of Mo thin films on the sputtering time

采用直流磁控溅射法在SLG衬底上沉积Mo薄膜,并用XRD、SEM、四探针等对薄膜进行表征,研究了沉积时间对薄膜晶体结构、表面形貌以及电学性能的影响。研究发现,沉积时间能够调节Mo薄膜的择优取向。溅射时间较短(5～10min)时,沉积的Mo薄膜呈(110)择优取向。溅射时间超过15min后,薄膜呈现(211)取向,且(211)晶面择优程度随沉积时间的增加而提高。随着择优取向的改变,薄膜的表面形貌由三角形颗粒变为长条形颗粒,电阻率也发生相应变化,由3.92×10-5Ω·cm增加到4.27×10-5Ω·cm再降低,对应薄膜生长的晶带模型由晶带T型组织变为晶带2组织。

In this paper, molybdenum （Mo） thin films have been deposited on soda-lime glass substrates using DC magnetron sputtering method and were characterized by XRD, SEM and four-probe instrument. The results show that the crystal structure, surface morphology and electrical properties of Mo thin films were affected by the deposition time. The films deposited at short time are preferentially oriented along （110） plane, and films deposited beyond 15min show （211） preferred orientation. With the increase of deposition time, the crystallo- graphic orientation of Mo thin films transforms from （110） plane to （211） plane. Surface morphology of the films changes form triangular particles to rectangles particles, resulting from the crystallographic orientation transformation. Accordingly, the electrical resistivity of films also change from 3.92 × 10^-5Ω· cm to 4.27 × 10 ^-5Ω·cm. The corresponding growth model of the Mo films change from Thorton＇s zone model to texture to crystal zone 2 structure.