XPS测量稀土氧化物薄膜禁带宽度的可行性研究

Study on the Feasibility of Measuring the Band Gap of Rare Earth Oxide Films by XPS

采用射频磁控溅射法在石英衬底和Si衬底上分别生长了Er2O3,Tm2O3和Yb2O3三种稀土氧化物薄膜。分别利用光学方法和X射线光电子能谱测量法对以上三种稀土氧化物的禁带宽度进行了测量,并将测量结果进行了对比研究。采用光学方法测量的Er2O3,Tm2O3和Yb2O3的带隙分别是(6.3±0.1),(5.8±0.1)和(7.1±0.1)eV;而采用X射线光电子能谱法测量的这三种材料的禁带宽度分别为(6.2±0.2),(6.0±0.2)和(6.9±0.2)eV。两种测量结果的对比分析表明:在误差允许的范围内,利用X射线光电子能谱方法测量稀土氧化物的禁带宽度是可行的。

Three kinds of rare earth oxide films,i.e.Er2O3,Tm2O3 and Yb2O3 films were depo-sited on quartz substrates and Si substrates using the radio-frequency magnetron sputtering me-thod,respectively.The band gaps of the films were measured with the ultraviolet-visible spectrophotometry and X-ray photoelectron spectroscopy（XPS）,and the results of which were researched comparatively.The band gaps of Er2O3,Tm2O3 and Yb2O3 measured with the ultraviolet spectrophotometry are（6.3±0.1）,（5.8±0.1）and（7.1±0.1）eV,while the band gaps of the films for XPS measurements are（6.2±0.2）,（6.0±0.2）and（6.9±0.2）eV,respectively.The comparison analysis of the two measurement results shows that using XPS to measure the band gap of the rare earth oxide film is feasible within the allowed error range.