摘要
利用红外光谱仪无损测量氮化镓薄膜的反射红外光谱,通过拟合计算获得薄膜的载流子浓度以及迁移率.实验测得氮化镓薄膜的载流子浓度为3.204×1018 cm-3,迁移率为2.149×102 cm2/(V.s),该结果与霍尔效应方法测量结果一致.
The infrared reflectance spectrum of GaN film was measured using infrared spectrum, the carrier concentration and mobility of the GaN film were obtained by data fitting. The carrier con- centration was 3. 204 × 10^18cm-3, and the mobility was 2. 146 × 102 cm3/（V·s）, the experimental re- sults agreed with the results of Hall effect measurement.
出处
《物理实验》
2013年第3期4-6,23,共4页
Physics Experimentation
基金
北京科技大学研究型教学示范课建设项目(No.JY2011SFK18)
北京科技大学教育教学改革研究项目(重点)(No.JG2011Z14)
