真空蒸发制备Sb掺杂CdTe薄膜

Deposition of Sb-doped CdTe thin films by vacuum evaporation

采用真空蒸发技术在玻璃衬底上制备了Sb掺杂的CdTe薄膜,薄膜为沿(111)晶向择优生长的立方闪锌矿结构的CdTe,结果表明Sb掺杂使得薄膜表面更加均匀致密,改善了薄膜的结晶状况,增大了薄膜的光吸收范围,同时也使薄膜的带隙宽度有所减小,大大降低了薄膜的电阻率。

Pure CdTe thin films and metal Sb-doped CdTe thin films were prepared on glass substrates by vacuum evaporation method. We got the films which have a cubic sphalerite structure with a preferential growth orientation of （111 ）. The experimental results show that the Sb doped film surface is more compact and uniform, also the crystallization of the fihn is improved. And doping Sb in pure CdTe thin films significantly enhance the optical absorption and reduce the width of the band gap, which means that the optical absorption range of CdTe thin films can be widened. Finally, on the aspect of electrical properties, the resistivity of the thin films has significantly been lowered.