摘要
叙述了研究功率半导体器件通态特性的重要性，在分析国际三大著名通态伏安特性公式的基础上，说明了通态模拟函数的理论依据及运用maflab程序的制作方法，阐述了采用通态模拟函数的现实意义。
Describes the importance of research on state characteristic about power semiconductor devices. on the basis of the analysis obout the three international famous on state volt-ampere characteristics, illustrates the theory on state simulation function and the method of making on state simulation function using matlab program. Elaborated the practical significance of use on state simulation function.
出处
《电源技术应用》
2013年第3期45-50,共6页
Power Supply Technologles and Applications
关键词
PIN二极管
通态特性
模拟函数
matlab方法
PiN rectifier diode, on state characteristic, simulation function, matlab program.
