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超短电子脉冲展宽的外场依赖性分析 被引量:1

Dependence of Ultra-Short Electron Packet Broadening on External Electric Field
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摘要 根据已有文献研究结果,建立了Boersch效应电子脉冲展宽物理分析模型,确立了以时间弥散特征参量为核心参数的电子脉冲展宽表征理论,以此为基础分析了超短电子脉冲展宽对外场的依赖性。结果表明:相比匀速漂移场,加速场具有较好的抑制电子脉冲展宽作用,而减速场则增大了电子脉冲展宽;对条纹相机和超快电子衍射仪等电子枪系统而言,除了已知的两个区域—光阴极附近和偏转板后等电位漂移空间之外,光电子脉冲从高电位向低电位传输时其时间弥散也是非常显著的。此结论对高性能电子枪工程设计具有重要的理论指导价值。 Boersch effect of electron pulse broadening was modeled and analyzed, based on the existing results re- ported in literature. A theory to characterize the electron packet broadening was formulated, with the time dispersion char- acteristics as the major factor. The influence of the external electric field on the ultra-short electron packet broadening was evaluated, in the newly-developed theory. The results show that the external e-field, accelerating the electrons, suppresses the broadening;whereas the field, decelerating electrons, widens the broadening. In image-converter streak cameras and uhm-fast electron diffraction devices, there exist one non-equipatential and two known equi-potential regions:one situates in the vicinity of photocathode, the other lies behind the deflection plate. Our preliminary results are of much technological interest for design of high-performance electron gun, because significant time broadening originates from the transit of the photoelectron packet in the potential decreasing direction.
出处 《真空科学与技术学报》 EI CAS CSCD 北大核心 2013年第2期120-125,共6页 Chinese Journal of Vacuum Science and Technology
基金 国家自然科学基金项目(No.11175198)
关键词 脉冲展宽 Boersch效应 时间分辨 内建场 Electron packet broadening, Boersch effect, Time-resolved, Built-in field
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参考文献15

  • 1Larsson J,Cheng Z,Judd E,et al. Optics Letters[J] ,1997,22 (13) : 1012 - 1014.
  • 2Pecha R, Gompf B, Nick G, et al. Physical Review Letters [J], 1998,18(3) :717 - 720.
  • 3曹政,蒋百灵,杨波,鲁媛媛.不同非平衡度磁场环境中溅射等离子体的诊断与分析[J].真空科学与技术学报,2011,31(6):696-700. 被引量:1
  • 4Opachich Y P,Comin A,Bartelt A F,et al.J Phys E: Condens Matter[ J], 2010,22(10) : 1656003/1-1656003/5.
  • 5Kahnt A, Kambmtt J, Esdaile L J, et al. J Am Chem Soe [ J], 2011,133 (11) : 9863 - 9871.
  • 6Niu H, Sibbett W. Rev Sci Instrum [ J], 1981,52(12) : 1830 - 1836.
  • 7唐天同.西安交通大学学报[J],1984,18(1):76-85.
  • 8雷威,尹涵春.利用Monte Carlo法计算粒子传输中的空间电荷效应[J].计算物理,1997,14(6):787-795. 被引量:3
  • 9Siwick B J,Dwyer J R, Jordan R E,et al.J Appl Phys[J], 2002,92(3) : 1643 - 1649.
  • 10Qian B L, Elsayed-All H E. J Appl Phys[ J ], 2002,91 ( 1 ) : 462 - 469.

二级参考文献17

  • 1范毓殿 王怡德 唐祥.平面磁控溅射靶的磁场设计.真空,1982,(5):1-7.
  • 2Ehiasarian A P, Hovsepian P Eh, Huhman L, et al. Comparison of Microstructure and Mechanical Properties of Chromium Nitride-Based Coatings Deposited by High Power Impulse Magnetmn Sputtering and by the Combined Steered Cathodic Arc/Unbalanced Magetron Technique[J]. Thin Solid Films, 2004. 457.270 - 277.
  • 3Zhang G A, Yan P X, Wang P, et al. Influence of Nitrogen Content on the Structural, Electrical and Mechanical Properties of CrNx Thin Films[J]. Mater Sci Eng,2007,A 460/461 : 301 - 305.
  • 4Zhang Z G, Rapaud O, Bonasso N, et al. Control of Microstructures and Properties of dc Magnetron Sputtering Deposited Chromium Nitride Films[ J]. Vacuum, 2008,82:501 - 509.
  • 5Zhao Z B, Rek Z U, Yalisove S M, et al. Nanostructured Chromium Nitride Films with a Valley of Residual Stress[J]. Thin Solid Films,2006,472:96- 104.
  • 6Polcar T, Parreria N M G, Novak R. Friction and Wear Behaviour of CrN Coating at Temperatures up to 500℃[J] .Surf Coat Technol,2007,201:5228 - 5235.
  • 7Lin Jiangliang, Moore John J, Sproul William D, et al. The Structure and Properties of Chromium Nitride Coatings Deposited Using dc, Pulsed dc and Modulated Pulse Power Magnetron Sputtering[ J] .Surface & Coatings Technology,2010, 204: 2230 - 2239.
  • 8Shon C H, Lee J K. Modeling of Magnetron Sputtering Plasma[J]. Applied Surface Science,2002,192:258 - 269.
  • 9迈克尔A力伯曼,阿伦J里登伯格.等离子体放电原理与材料处理[M].蒲以康,等译.北京:科技出版社,2007:68.
  • 10Koirala S P, Abu-safe H H, Mensah S L, et al. Langmuir Probe and Optical Emission Studies in a Radio Frequency (rf) Magnetron Plasma Used for the Deposition of Hydrogenated Amorphous Silicon [ J ]. Surf Coat Technol, 2008, 203 : 602 - 605.

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