单晶Tm_2O_3薄膜的制备与F-N隧穿机制

Fabrication of Single Crystalline Tm_2O-3 Thin Films and Its F-N Tunneling Mechanism

采用分子束外延方法结合原位退火生长技术在Si(001)衬底上制备了Tm2O3薄膜,XRD测量结果表明所制备样品为单晶Tm2O3.在低温环境下,采用MOS电容结构对薄膜进行I-V测试,研究了样品的F-N隧穿特性,得出Pt/Tm2O3和Al/Tm2O3的势垒高度分别为2.95,1.8eV.从能带的角度表明Tm2O3是一种高K栅介质候选材料.

The single crystalline Tm2O3 thin films were deposited on p-type Si（001）substrates through molecular beam epitaxy（MBE）and in situ annealed. The results of X-ray diffracton （XRD） show that the Tm2O3 thin films were single crystalline. I-V characteristics of the Tm2O3 thin films as gate dielectric in a MOS structure were measured at low temperature. The barrier heights of the Pt/Tm2O3 and AI/Tm2O3 contacts were obtained to be 2.95 eV and 1.8 eV, respectively. From the band offset point of view, single crystalline Tm2 03 thin film is believed to be a candidate as high-K material.