电子照射对硅漂移探测器性能的影响

Effect on the characteristic of silicon drift detector by electron exposure

由于高能电子辐射的长期照射,新一代太阳X射线探测器硅漂移传感器的探测性能可能发生变化.通过用电子放射源模拟空间电子对硅漂移探测器进行辐射照射试验,以测试电子照射对传感器能量分辨率、效率、信号幅度等性能的影响.试验结果表明,长期的电子照射造成硅漂移探测器面损伤和体损伤,使其漏电流增大,信号幅度减小,能量分辨率也受到照射的影响,而探测效率未发生变化.

Detection characteristics of the silicon drift detector（SDD）,which is used in the new generation of solar x-ray detector onboard FY-2 satellite,might change due to the exposure of long-term high-energy electron radiation.To test the effect on its energy resolution,efficiency,signal amplitude and other characteristics by electron exposure,an SDD was irradiated using electron radionuclide sources,which is to simulate the space electron radiation.Experiment result shows that both surface damage and bulk damage occur after long-term electron irradiation on the SDD.The SDD＇s leakage currents increase;its signal amplitude decrease and energy resolution is also affected by the electron irradiation.No changes in detection efficiency are found.