摘要
本文介绍了 X 射线双晶衍射术的基本原理。描述了双晶衍射技术在半异体材料的离子注入、单层及多层异质结外延膜、应变超晶格等新型材料研究中的应用。给出了双晶衍射对 Si 中高能 B^+注入和 In_xGa_(1-x)As/GaAs 超晶格研究的实例。
The fundamental theory of X-ray double-crystal diffractometry is pres-ented in this paper.The applications of this technique to investigation or new structuralmaterials,which include ion implantation into semiconductor materials,single or multipleepitaxial layers,strained-layer superlattices and other new elctronic and optical materials,have been introduced.As the examples,the results of high energy B^+ implanted intoSi(100) wafer and In_xGa_(1-x)AS/GaAs strained-layer superlattice are also given.
关键词
X射线
双晶衍射
半导体材料
ion implantation
X-ray double-crystal diffraction
computer simulation
