摘要
A strain-compensated InGaN quantum well（QW） active region employing a tensile AlGaN barrier is analyzed.Its spectral stability and efficiency droop for a dual-blue light-emitting diode（LED） are improved compared with those of the conventional InGaN/GaN QW dual-blue LEDs based on a stacking structure of two In0.18Ga0.82N/GaN QWs and two In0.12Ga0.88N/GaN QWs on the same sapphire substrate.It is found that the optimal performance is achieved when the Al composition of the strain-compensated AlGaN layer is 0.12 in blue QW and 0.21 in blue-violet QW.The improvement performance can be attributed to the strain-compensated InGaN-AlGaN/GaN QW,which can provide a better carrier confinement and effectively reduce leakage current.
A strain-compensated InGaN quantum well（QW） active region employing a tensile AlGaN barrier is analyzed.Its spectral stability and efficiency droop for a dual-blue light-emitting diode（LED） are improved compared with those of the conventional InGaN/GaN QW dual-blue LEDs based on a stacking structure of two In0.18Ga0.82N/GaN QWs and two In0.12Ga0.88N/GaN QWs on the same sapphire substrate.It is found that the optimal performance is achieved when the Al composition of the strain-compensated AlGaN layer is 0.12 in blue QW and 0.21 in blue-violet QW.The improvement performance can be attributed to the strain-compensated InGaN-AlGaN/GaN QW,which can provide a better carrier confinement and effectively reduce leakage current.
基金
Project supported by the National Natural Science Foundation of China (Grant No. U1174001)
the Ministry of Education Scientific Research Foundation for Returned Scholars,China (Grant No. 20091001)
the Scientific and Technological Plan of Guangzhou City,China (Grant No. 2010U1-D00131)
the Natural Science Foundation of Guangdong Province,China (Grant No. S2011010003400)
