摘要
An AlGaN/GaN high-electron mobility transistor（HEMT） with a novel source-connected air-bridge field plate（AFP） is experimentally verified.The device features a metal field plate that jumps from the source over the gate region and lands between the gate and drain.When compared to a similar size HEMT device with a conventional field plate（CFP） structure,the AFP not only minimizes the parasitic gate to source capacitance,but also exhibits higher OFF-state breakdown voltage and one order of magnitude lower drain leakage current.In a device with a gate to drain distance of 6 μm and a gate length of 0.8 μm,three times higher forward blocking voltage of 375 V was obtained at VGS =-5 V.In contrast,a similar sized HEMT with a CFP can only achieve a breakdown voltage no higher than 125 V using this process,regardless of device dimensions.Moreover,a temperature coefficient of 0 V/K for the breakdown voltage is observed.However,devices without a field plate（no FP） and with an optimized conventional field plate（CFP） exhibit breakdown voltage temperature coefficients of-0.113 V/K and-0.065 V/K,respectively.
An AlGaN/GaN high-electron mobility transistor（HEMT） with a novel source-connected air-bridge field plate（AFP） is experimentally verified.The device features a metal field plate that jumps from the source over the gate region and lands between the gate and drain.When compared to a similar size HEMT device with a conventional field plate（CFP） structure,the AFP not only minimizes the parasitic gate to source capacitance,but also exhibits higher OFF-state breakdown voltage and one order of magnitude lower drain leakage current.In a device with a gate to drain distance of 6 μm and a gate length of 0.8 μm,three times higher forward blocking voltage of 375 V was obtained at VGS =-5 V.In contrast,a similar sized HEMT with a CFP can only achieve a breakdown voltage no higher than 125 V using this process,regardless of device dimensions.Moreover,a temperature coefficient of 0 V/K for the breakdown voltage is observed.However,devices without a field plate（no FP） and with an optimized conventional field plate（CFP） exhibit breakdown voltage temperature coefficients of-0.113 V/K and-0.065 V/K,respectively.
基金
Project supported by the Delta Science & Technology Educational Development Program (Grant No. DREK2010001)
the Zhejiang Provincial Natural Science Foundation of China for Distinguished Young Scholars (Grant No. R1100468)
