摘要
The present paper discusses our investigation of InGaAs surface morphology annealed for different lengths of time.After annealing for 15 min,the ripening of InGaAs islands is completed.The real space scanning tunneling microscopy（STM） images show the evolution of InGaAs surface morphology.A half-terrace diffusion theoretical model based on thermodynamic theory is proposed to estimate the annealing time for obtaining flat morphology.The annealing time calculated by the proposed theory is in agreement with the experimental results.
The present paper discusses our investigation of InGaAs surface morphology annealed for different lengths of time.After annealing for 15 min,the ripening of InGaAs islands is completed.The real space scanning tunneling microscopy（STM） images show the evolution of InGaAs surface morphology.A half-terrace diffusion theoretical model based on thermodynamic theory is proposed to estimate the annealing time for obtaining flat morphology.The annealing time calculated by the proposed theory is in agreement with the experimental results.
基金
Project supported by the National Natural Science Foundation of China (Grant Nos. 60866001 and 61076049)
the Science and Technology Projects for Overseas Researchers of Guizhou Province (Grant No. (2007) 03)
the Foundation of Guizhou Provincial Science and Technology Department (Grant No. QKH-J[2007]2176)
the Special Assistant to the High-Level Personnel Research Projects of Guizhou Provincial Committee,Organization Department(Grant No. TZJF-200610)
the Doctorate Foundation of the Education Ministry of China (Grant No. 20105201110003)
the Science and Technology Projects for Overseas Researchers of Guizhou Province (Grant No. Z103233)
Special Governor Fund for Outstanding Professionals in Science & Technology and Education of Guizhou Province (Grant No. 2009114)
the Innovation Funds for Graduates of Guizhou University (Grant No. LG2012019)
