摘要
用光-CVD 技术,在100—200℃的温度下,在 Si 片上淀积出了 Si_3N_4薄膜。本文研究了薄膜淀积速率与淀积参数的关系,讨论了淀积的 Si_3N_4薄膜的物理性质、化学性质和力学性质。
Si_3N_4 films have been deposited on Si wafers at temperature range of 100—200℃ by photo-CVD technique.This paper presents the relationship between the deposi-tion rate and other deposition parameters of the films.The physical,chemical and mechani-cal properties of the deposited Si_3N_4fimls are also discussed.
