摘要
用三源真空共蒸发沉积 CuInSe_2。调节三源的配方及蒸发速率,控制薄膜的组分,获得了具有单相黄铜矿结构的多晶 CuInSe_2薄膜。发现适当的热处理对薄膜的成相是必需的。研究了薄膜组分、结构、光学和电学性质与工艺条件的关系。
Thin films of CuInSe_2 have been co-evaporated in vacuum bythree-sources process.The compositions of the films have been controlled by ratio of theelements in the three sources and temperature of the three sources.Satisfactary compositionand single chalcopyrite structure have been obtained.It has been found that treatment isnecessary for forming single chalcopyrite phase.The composition,structure,optical andelectrical properties of evaporated CuInSe_2 thin films have been disscussed in relation topreparation conditions.
出处
《材料科学进展》
EI
CAS
CSCD
1991年第6期472-476,共5页
基金
国家自然科学基金
5880101
