微机电系统用TbCu_7型SmCo基薄膜的合成(英文)

Synthesis of TbCu_7-type Structural SmCo-based Films for Microelectromechanical System Applications

微机电系统(MEMS)的发展要求Si基片上的永磁薄膜具有良好的热稳定性。采用磁控溅射工艺在单晶Si(100)基片上沉积了SmCo基永磁薄膜,研究了溅射参数对薄膜沉积速率、微观结构、晶体结构和磁性能的影响。结果表明:通过调整溅射参数可以获得TbCu7型结构的SmCo基永磁薄膜。该薄膜具有良好的晶粒取向和微观结构,因而获得了较好的面内磁性能,其反磁化过程主要受控于畴壁钉扎机制。

Development of microelectromechanical system（MEMS） requires permanent magnetic films prepared on Si substrates with good thermal stability.The SmCo-based films were deposited on Si（100） substrates by magnetron sputtering process,and the effect of sputtering parameters on deposition rate,microstructure,crystal structure,and magnetic properties were investigated subsequently.The results show that the TbCu7-type structural SmCo-based film is obtained with adjusted sputtering parameters.The film exhibits a well preferred crystal orientation and fine microstructure,leading to better in-plane magnetic properties and a magnetization reversal process mainly controlled by domain wall pinning mechanism.