退火处理对磁控溅射制备CIGSe吸收层的影响

ANNEALING STUDIES ON CIGSE PREPARED BY MAGNETRON SPUTTERING

在Se气氛中对磁控溅射CIGSe靶材制备的CIGSe薄膜进行退火处理。采用SEM、XRD、Raman、XRF、Hall等方法观察和分析了退火的主要工艺参数对薄膜表面形貌、组织结构、成分及电学性能的影响,并制备了CIGSe太阳电池。结果表明,采用磁控溅射CIGSe靶材+Se气氛中退火处理的方法,可制备得到成分均匀、电学性能优良、单一黄铜矿相的CIGSe薄膜;退火温度和退火时间是影响退火后薄膜质量的主要因素。退火温度低于350℃时,退火效果不明显。退火温度在400℃,退火时间达120min时,薄膜完成再结晶过程,并制得单一黄铜矿相的CIGSe薄膜;退火过程存在Cu-Se二次相的析出和消融,同时具有为薄膜补Se的作用。该文采用该方法制备出的CIGSe太阳电池最高转换效率为5.44%。

CuInxGa1-xSe2 thin films were annealed in Se （Selenium） vapor atmosphere, which were deposited by magnetron sputtering from a CIGSe target. SEM, XRD, Raman, XRF and Hall were used to observe and analyze the compositions, microstructures, surface morphologies and electrical properties of the films. After annealing, the performance of CIGSe films was improved. The crystalline quality and electrical properties of annealed CIGSe films will be changed when the annealing temperature was increased to 350℃, and the chalcopyrite structure was ob- tained when annealing temperatures were increased to 400℃ for 120 minutes. Se could be added into the thin films while annealing in Se vapor atmosphere. Cu-Se phase was formed at the beginning of annealing and was reduced while annealing time was increased. In this word, with optimized parameters, a cell efficiency of 5.44% was achieved.