磁控溅射工艺参数对Cu薄膜电阻率的影响

Effects of process parameters on resistivity of copper thin films deposited using magnetron sputtering

在确定Cu薄膜临界尺寸的基础上,选定基底温度、靶基距、溅射功率和工作气压为影响因素设计正交试验,研究了磁控溅射制备工艺对Cu薄膜电阻率的影响。研究结果表明:基底温度是影响薄膜电阻率的最主要因素,电阻率随着基底温度的升高而减小;在工艺条件为基底温度200℃、靶基距45 mm、溅射功率100 W、工作气压0.5 Pa时,所制薄膜的电阻率将会达到最小。最后,结合薄膜微观形貌对试验结论进行了分析,并对最佳工艺条件进行了实验验证。

After the critical dimension of Cu thin film was determined, an orthogonal experiment with four factors of base temperature, substrate-to-target distance, sputtering power and air pressure was designed in order to study the influence of magnetron sputtering preparation process on the resistivity of Cu thin film. The results show that the base temperature is the key factor to thin film resistivity, which decreases with the base temperature increasing, and the optimal preparation process for the lowest resistivity is base temperature 200℃, substrate-to-target distance 45 mm, sputtering power 100 W and air pressure 0.5 Pa. At last, the experimental results were analyzed, combined with thin-film microstructures, and the optimal process was verified by experiment.