氩氧分压比对ZnO薄膜的结构及电学性能的影响

Effects of argon oxygen partial pressure ratio on the structure and electrical properties of ZnO thin film

采用射频磁控溅射法制备了氧化锌基薄膜晶体管(ZnO-TFTS),研究了氩氧分压比对ZnO薄膜生长以及ZnO-TFT电学特性的影响。结果表明:氩氧分压比为40/16和40/8时制得的ZnO-TFT样品,都存在氧过量现象,生长晶向都存在一定左偏移,有源层沟道都为n型,均工作在增强型模式下,饱和特性都较好,且都呈现出一个较大的负方向漏电流,但氩氧分压比为40/16时制备的ZnO薄膜结晶性更好,其所对应的ZnO-TFT具有更高的场效应迁移率和开关电流比,以及更低的亚阈值摆幅。

The ZnO thin film transistors （ZnO-TFTs） were prepared by RF magnetron sputtering, the influences of argon oxygen partial pressure ratio on the growth of ZnO thin films and the electrical characteristics of ZnO-TFT were discussed. The results show that the ZnO-TFT samples are prepared at argon oxygen partial pressure ratios of 40/16 and 40/8, the oxygen excess phenomenon is existed in the both samples, the crystal orientation is shifted left a little in both samples, the active layer channels are n-type, and all of them working in the enhanced mode, the saturation characteristics are quite well, and all of them show a larger leakage current in the negative direction, but for the sample prepared at argon oxygen partial pressure ratio of 40/16, the crystalline of the ZnO thin films is better, the ZnO-TFT＇s field effect mobility and switch current ratio are higher, and the threshold swing is lower.