金属氧化物半导体场效应管长期辐射效应的数值模拟

Numerical simulation of long-term radiation effects for MOSFETs

将粒子输运的蒙特卡罗方法与器件数值模拟的有限体积法相耦合来模拟典型金属氧化物半导体场效应管(MOSFET)的长期辐射效应。二氧化硅中的陷阱电荷及硅中的自由电子和空穴均使用漂移扩散模型来描述,入射粒子的能量沉积可作为源项耦合至漂移扩散模型方程,并根据有限体积法得到控制方程的离散格式,方程的数值解即为MOSFET的长期辐射响应结果。使用该方法模拟了MOSFET受射线粒子辐照后的阈值电压漂移与关态漏电流现象。结果表明,耦合方法适用于典型半导体器件长期辐射效应模拟,其阈值电压漂移及漏电流计算结果与文献符合较好。

A coupled algorithm is introduced to simulate the long-term radiation effects of MOSFETs, which combines par- ticle transport with semiconductor governing equations. The former is dealt with Monte-Carlo method, and the latter is solved by finite-volume method. The trapped charge in SiO2 and the free charge in Si are both described by the drift-diffusion model, and the deposited energy by incident particles can be coupled with the continuous equations of charge, acting as a source item. The discrete form of governing equations is obtained using the finite-volume method, and the numerical solutions of these equations are the long-term radiation response result of MOSFETs. The threshold voltage shift and off-state leakage current of an irradiated MOSFET are simulated with the coupled algorithm respectively, showing a good accordance with results by other calculations.