La_2O_3、Cr_2O_3共掺杂的CCTO陶瓷介电性能研究

Dielectric properties of La_2O_3 and Cr_2O_3 co-doped CCTO ceramics

采用氧化物混合工艺制备了La2O3和Cr2O3共掺杂的CaCu3Ti4O12(CCTO)陶瓷材料。通过XRD、介电温度特性等测试手段,研究了掺杂不同浓度的La2O3和Cr2O3对CCTO体系陶瓷介电性能的影响,并对掺杂机理进行了分析.研究结果表明:分别掺杂La2O3和Cr2O3的CCTO陶瓷的介电损耗为～0.2,比纯的CCTO陶瓷样品低,而介电常数仍保持在～104;掺杂0.03at%La2O3和0.08at%Cr2O3的CCTO陶瓷材料的介电常数为4.4×104,介电损耗可降至0.15.因此,通过共掺杂的方法可以在有效降低CCTO陶瓷介质损耗的同时,仍维持高的介电常数.

La2 O3 and Cr2O3 co-doped CCTO ceramics were prepared by traditional solid-state reaction technique. The effect of doped on dielectric properties of CCTO ceramics were stud- ied via X-ray diffraction, dielectric-temperature-characteristics, and the doping mechanism were analyzed. The results showed that the La2 O3 and C2rO3 co-doped CCTO ceramics had the better dielectric properties. Dielectric loss of co-doped samples was about 0.2,which was lower than CCTO ceramics,and dielectric permittivity of co-doped samples remained at 104. For samples doped 0.03 at%La2O3 and 0.08 at%Cr2O3 ,dielectric permittivity was obtained at 4.4 ×10^4 and dielectric loss was obtained at 0.15. The results indicated that the co-doped method is effective in reducing dielectric loss and maintaining high dielectric permittivity.