类金刚石/碳化钨多层膜的制备及其结构

Preparation and microstructure of DLC/WC multilayer thin films

采用阳极型气体离子源结合非平衡磁控溅射的方法,在单晶硅及Ti6Al4V钛合金基体上制备掺钨类金刚石多层膜(DLC/WC),利用俄歇电子谱(AES)、透射电镜(TEM)、X射线光电子能谱(XPS)及X射线衍射(XRD)等对膜层的过渡层、界面及微观结构进行研究。结果表明:所制备的膜层厚2.7μm,硬度高达3 550HV,摩擦因数为0.139,与Ti6Al4V基体结合力为52 N;W主要以纳米晶WC的形式与非晶DLC形成WC/DLC多层膜,该多层膜仍呈现出类金刚石膜的主要特征。

Anodic gas ion beam source （IBS） and unbalance magnetron sputtering （UBM） were employed to deposit diamond-like carbon/WC （DLC/WC） multilayer film on Si. Auger electron spectroscopy （AES）, transmission electron microscopy （TEM）, X-ray photoelectron spectroscopy （XPS）, X-ray diffractometry （XRD） and microhardness tester were employed to evaluate the interface, microstructure and composition of films. The results show that the film thickness is 2.7 ~m, hardness up to 3 550HV, the friction coefficient is 0.139, and adhesion strength is 52 N in Ti6A14V substrate. In the film, nanocrystalline WC and amorphous DLC layer overlap the formation of DLC/WC multilayers. The multilayer film still shows that the main features, which are very similar to the DLC film.