Cu薄膜生长初期的计算机模拟

Computer Simulation of the Early Growth of Cu Films

基于Monte Carlo模型,在理想基底上设置100×100的二维方形格,利用周期性边界条件建立Cu薄膜初期生长模型,并模拟粒子的气相沉积过程及迁移步数对薄膜生长的影响规律.结果表明:当沉积粒子数逐渐增加时,基底表面的粒子团簇结构逐渐增大;在温度不变的条件下,随着最大迁移步数的增加,团簇逐渐增大,团簇数量逐渐减小,且团簇分布逐渐稀疏;温度升高使粒子聚集为岛状,薄膜呈岛状生长.

Two-dimensional computer graphic simulation on the initial growth of Cu thin film was made based on Monte Carlo model.In this model,100×100 two-dimensional square lattice was established as the ideal substrate and the periodic boundary conditions were used.From the simulation results,it was found that with the increase of the number of the deposited particles,the particle-cluster deposited on the substrate increased.It was also found that with the increase of the migration step,the size and number of the cluster increased and the distribution became sparse when the temperature kept stable.In addition,the particles deposited assemble to the island with the increase of the temperature,the film was growing up into island.