摘要
首先采用高速电镀法在硅衬底上沉积锌膜,然后将锌膜在马弗炉中700℃处理,得到覆盖有氧化锌纳米棒的氧化锌多晶薄膜。利用扫描电镜观测样品的表面形貌,利用X射线衍射仪研究样品的微结构,利用荧光分光光度计测试样品的室温光致发光谱。利用氧化锌的生长机制和光致发光机制对实验结果进行了解释。结果表明,该法制备的覆盖有氧化锌纳米棒的氧化锌薄膜是多晶的六角纤锌矿型晶体结构,没有择优取向。观察到在374nm(3.31 eV)的一个强的紫外发光峰,发光峰的半高全宽为288meV。用锌膜氧化法制备的覆盖有氧化锌纳米棒的氧化锌多晶薄膜是一种很有前途的光电材料。
In this thesis, Zn films were deposited on silicon substrates by high- speed galvanization, and then were treated in Muffle Resistance Furnace at 700 ~C in an open - air environment. Polycrystalline ZnO films covered with ZnO nanorods were grown. Its mor- phologies were studied by SEM and its crystal structures were studied by XRD. Its photoluminescence spectrum was also measured. And possible mechanisms of the growth and the photoluminescence of ZnO nanorods were proposed to explain the experimental result. The XRD pattern for the ZnO films covered with ZnO nanorods indicated that they possessed a polycrystalline hexagonal wurtzite crystal structure with no preferred orientation. In our experiment, only a strong PL emission is observed at UV wavelength of 374 nm (3.31 eV). The PL full width at half maximum was 288 meV. These results indicate that polycrystalline ZnO films covered with ZnO nanorods pre- pared by thermal oxidation from metallic zinc films may be a promising material for optoelectronic devices.
出处
《南阳理工学院学报》
2012年第4期5-7,共3页
Journal of Nanyang Institute of Technology
关键词
热氧化
光致发光
生长机理
氧化锌薄膜
thermal oxidation
photoluminescence
growth mechanism
ZnO films.