摘要
We have presented a theoretical calculation of the differential cross section （DCS） for the electron Ra- man scattering （ERS） process associated with the interface optical （IO） and surface optical （SO） phonons in mul- tilayer coaxial cylindrical AlxGal-xAs/GaAs quantum cables （QC）. We consider the Frohlich electron-phonon interaction in the framework of the dielectric continuum approach. The selection rules for the processes are stud- ied. Singularities are found to be sensitively size-dependent and by varying the size of the QC, it is possible to control the frequency shift in the Raman spectra. A discussion of the phonon behavior for the QC with different size is presented. The numerical results are also compared with those of experiments.
We have presented a theoretical calculation of the differential cross section （DCS） for the electron Ra- man scattering （ERS） process associated with the interface optical （IO） and surface optical （SO） phonons in mul- tilayer coaxial cylindrical AlxGal-xAs/GaAs quantum cables （QC）. We consider the Frohlich electron-phonon interaction in the framework of the dielectric continuum approach. The selection rules for the processes are stud- ied. Singularities are found to be sensitively size-dependent and by varying the size of the QC, it is possible to control the frequency shift in the Raman spectra. A discussion of the phonon behavior for the QC with different size is presented. The numerical results are also compared with those of experiments.
基金
Project supported by the Natural Science Foundation of Guangdong Province （No. S2012010010976）.
