摘要
We report the DC and RF performance of InAlN/GaN high-electron mobility transistors with AlGaN back barrier grown on SiC substrates. These presented results confirm the high performance that is reachable by InAlN-based technology. The InAlN/GaN HEMT sample showed a high 2DEG mobility of 1550 cmE/（V-s） at a 2DEG density of 1.7 × 1013 cm-2. DC and RF measurements were performed on the unpassivated device with 0.2 μm ＂T＂ gate. The maximum drain current density at Vcs = 2 V is close to 1.05 A/mm in a reproducible way. The reduction in gate leakage current helps to increase the frequency performance of AlGaN back barrier devices. The power gain cut-off frequency of a transistor with an A1GaN back barrier is 105 GHz, which is much higher than that of the device without an A1GaN back barrier at the same gate length. These results indicate InAlN/GaN HEMT is a promising candidate for millimeter-wave application.
We report the DC and RF performance of InAlN/GaN high-electron mobility transistors with AlGaN back barrier grown on SiC substrates. These presented results confirm the high performance that is reachable by InAlN-based technology. The InAlN/GaN HEMT sample showed a high 2DEG mobility of 1550 cmE/（V-s） at a 2DEG density of 1.7 × 1013 cm-2. DC and RF measurements were performed on the unpassivated device with 0.2 μm ＂T＂ gate. The maximum drain current density at Vcs = 2 V is close to 1.05 A/mm in a reproducible way. The reduction in gate leakage current helps to increase the frequency performance of AlGaN back barrier devices. The power gain cut-off frequency of a transistor with an A1GaN back barrier is 105 GHz, which is much higher than that of the device without an A1GaN back barrier at the same gate length. These results indicate InAlN/GaN HEMT is a promising candidate for millimeter-wave application.
基金
Project supported by the National Natural Science Foundation of China(Nos.60890192,60876009)
