摘要
Two innovative de-embedding methods are proposed for extracting an electrical model for a through- silicon-via （TSV） pair consisting of a ground-signal （GS） structure. In addition, based on microwave network theory, a new solution scheme is developed for dealing with multiple solutions of the transfer matrix during the process of de-embedding. A unique solution is determined based on the amplitude and the phase characteristic of S parameters. In the first de-embedding method, a typical ＂π＂ type model of the TSV pair is developed, which illustrates the need to allow for frequency dependence in the equivalent TSV pair Spice model. This de-embedding method is shown to be effective for extracting the electrical properties of the TSVs. The feasibility of a second de-embedding method is also investigated.
Two innovative de-embedding methods are proposed for extracting an electrical model for a through- silicon-via （TSV） pair consisting of a ground-signal （GS） structure. In addition, based on microwave network theory, a new solution scheme is developed for dealing with multiple solutions of the transfer matrix during the process of de-embedding. A unique solution is determined based on the amplitude and the phase characteristic of S parameters. In the first de-embedding method, a typical ＂π＂ type model of the TSV pair is developed, which illustrates the need to allow for frequency dependence in the equivalent TSV pair Spice model. This de-embedding method is shown to be effective for extracting the electrical properties of the TSVs. The feasibility of a second de-embedding method is also investigated.
基金
Project supported by the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences
support by 100 Talents Program(No.Y0YB049001) of Chinese Academy of Sciences
