Sb掺杂对ATO薄膜光电性能的影响

Effect of Sb doping content on photoelectric properties of ATO thin films

以无水SnCl4和SbCl3为原料,采用溶胶-凝胶浸渍提拉镀膜法制备锑掺杂二氧化锡(ATO)导电薄膜,并采用XRD、SEM、霍尔效应(Halleffect)、四探针法、UV-Vis等测试手段表征不同Sb掺杂量对ATO薄膜结构及其光电性能的影响。结果表明,Sb的掺杂提高了ATO薄膜的导电性能和光学性能;Sb掺杂量为8%时ATO薄膜的电阻率低达0.048Ω.cm,平均光透射率高达84%,薄膜的综合性能达到最佳。

Anhydrous tin tetrachloride （SnC14） and antimony trichloride （SbC13） were used as raw materials to prepare antimony-doped tin oxide （ATO） conductive films by the sol-gel dip coating method, and the effect of different antimony （Sb） doping amounts on ATO thin films were characterized by XRD, SEM, Hall effect, four probe method, and UV-Vis testing. The results show that Sb doping can improve the conductive and optical properties of ATO films, and when the doping amount of Sb is 8 a. t%, ATO films have best comprehensive performance with resistivity as low as 0. 048 f2 Ω·cm and average transmittance as high as 84%.