基片温度对镓钛共掺杂氧化锌透明导电薄膜性能的影响

Influence of Substrate Temperature on Properties of Transparent Conducting Gallium and Titanium Doped Zinc Oxide Thin Films

以镓钛共掺杂氧化锌(GTZO)陶瓷靶作为溅射源材料,采用射频磁控溅射技术在玻璃基片上制备了GTZO透明导电薄膜,通过X射线衍射仪(XRD)、可见-紫外光分光光度计和四探针仪等测试表征,研究了基片温度对GTZO薄膜晶体结构、电学性质和光学性能的影响.结果表明:所制备的GTZO薄膜均为六角纤锌矿结构,并具有(002)择优取向,其结晶质量、晶粒尺寸、方块电阻、透过率、光学能隙以及品质因数都与基片温度密切相关,当基片温度为350℃时,GTZO薄膜的品质因数最大,具有最佳的光电综合性能.

Gallium and titanium doped zinc oxide（GTZO） thin films were deposited by radio-frequency magnetron sputtering method using a sintered ceramic target.The influence of substrate temperature on crystalline,optical and electrical properties of GTZO films was investigated by X-ray diffraction（XRD）,four-point probe and optical transmission spectroscopy.The results show that all the deposited films are polycrystalline with a hexagonal wurtzite structure and grow preferentially in the（002） direction.The structural,optical and electrical properties of the films are closely related to the substrate temperature.The GZTO film grown at substrate temperature of 350 ℃ possesses the best optoelectronic performance,with the largest grain size and the highest figure of merit.