ZnS多晶薄膜的磁控溅射沉积及其性能研究

ZnS thin films prepared by RF magnetron sputtering and its properties

采用磁控溅射法,在玻璃衬底上沉积了ZnS多晶薄膜,研究了衬底温度和Ar气流量对ZnS薄膜质量的影响.利用表面轮廓仪测量了薄膜的厚度,计算了薄膜的沉积速率.使用X射线衍射(XRD)分析了薄膜的微结构.通过紫外-可见光分光光度计测量了薄膜的透过谱,计算了禁带宽度.结果表明:所有制备的ZnS薄膜均为闪锌矿结构,所有样品在(111)方向具有明显的择优取向,沉积速率随着衬底温度升高而降低,薄膜有较大的内应力,导致禁带宽度变窄.衬底温度为300℃时,薄膜的结晶质量最好.随着Ar气流量的增加,沉积速率增大,但薄膜的结构和光学性能都没有明显的变化.

The Zinc sulfide （ZnS） thin films are prepared on glass substrate by RF magnetron sputtering technique at different substrate temperatures and Ar gas flows. Characterization of the film properties is carried out using surface probe surface profilometer, ultra-vision/vision （UV/Vis） spectrophotometer and X-ray diffraction （XRD）. The results indicate that X-ray diffraction analysis confirms the formation ofZnS sphalerite phase and has strong （111） preferred orientation and great lattice stress at all substrate temperatures. The deposited rates are reduced with the increasing of the substrate temperature. The best thin film is deposited as the substrate temperature is 300℃. The Ar gas flow has great positive correlation influence on deposited rates, but little influence on the optical and microstructure properties.