摘要
在功率混合电路中,对功率芯片的组装要求热阻小和可靠性高。在这方面传统的芯片组装方法如导电银浆粘接不能满足要求。本文介绍了一种新的功率芯片组装工艺--真空共晶焊接工艺,文章选用Au80Sn20焊料对毫米波GaAs功率芯片的焊接工艺进行了较为系统深入的研究,对焊接时气体保护、焊片大小、焊接压力、真空工艺过程的施加和夹具设计等因素进行了试验分析,并实现较高的焊接质量,X射线检测结果表明,GaAs功率芯片焊接具有较低的空洞率,焊透率高达90%以上。
Traditional assembly process such as silver adhesive attachment can＇ t meet requirements of low thermal resistance and high reliability in power hybrid circuit. A new assembly process named vacuum eutectic welding for power chip is presented, in this paper, the eutectic welding technology of millimeter-wave GaAs power chip was investigated deeply with Au80Sn20. The process parameters such as nitrogen atmosphere, solder size, pressure, vacuum technology and damp design were experimated, finally we achieve good welding. X--ray result indiciates that GaAs power chip welding has low voidage less than 10%.
出处
《中国科技信息》
2013年第8期125-126,共2页
China Science and Technology Information
